IXYS IXFH36N55 Series MOSFETs

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Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging

IXYS MOSFETs 36 Amps 550V 0.16 Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 550 V 36 A 160 mOhms - 30 V, 30 V - 55 C + 150 C 500 W Enhancement HyperFET Tube

IXYS MOSFETs 36 Amps 550V 0.16 Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 550 V 36 A 180 mOhms - 30 V, 30 V - 55 C + 150 C 560 W Enhancement HyperFET Tube