IXYS CoolMOS MOSFETs

Results: 11
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
IXYS MOSFETs 14 Amps 600V 0.19 Rds 19In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 15 A 190 mOhms - 20 V, 20 V 3.9 V 87 nC - 55 C + 150 C 125 W Enhancement CoolMOS Tube

IXYS MOSFETs 70 Amps 600V 9In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 70 A 45 mOhms - 20 V, 20 V 3.5 V 150 nC - 55 C + 150 C 625 W Enhancement CoolMOS Tube

IXYS MOSFETs 47 Amps 600V 0.045 Rds 30In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 47 A 40 mOhms - 20 V, 20 V 3 V 150 nC - 55 C + 150 C Enhancement CoolMOS Tube
IXYS MOSFETs CoolMOS Power MOSFET w/ HiPerDyn FRED Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole ISOPLUS-i4-PAK-5 N-Channel 600 V 47 A 45 mOhms CoolMOS Tube
IXYS MOSFETs 20 Amps 600V Non-Stocked
Min.: 50
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 7.6 A 200 mOhms - 20 V, 20 V 3.5 V - 55 C + 150 C 33 W Enhancement CoolMOS Tube
IXYS MOSFETs 24 Amps 600V Non-Stocked
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 24 A 165 mOhms - 20 V, 20 V - 55 C + 150 C 250 W Enhancement CoolMOS Tube
IXYS MOSFETs 24 Amps 600V Non-Stocked
Min.: 50
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 8.5 A 165 mOhms - 20 V, 20 V - 55 C + 150 C 34 W Enhancement CoolMOS Tube

IXYS MOSFETs 24 Amps 600V Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 24 A 165 mOhms - 20 V, 20 V 2.5 V 52 nC - 55 C + 150 C 250 W Enhancement CoolMOS Tube

IXYS MOSFETs 35 Amps 600V Non-Stocked Lead-Time 83 Weeks

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 35 A 90 mOhms - 20 V, 20 V 3 V 60 nC - 55 C + 150 C Enhancement CoolMOS Tube

IXYS MOSFETs 47 Amps 600V 70 Rds Non-Stocked Lead-Time 13 Weeks

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 47 A 60 mOhms - 20 V, 20 V 4 V 255 nC - 55 C + 150 C Enhancement CoolMOS Tube
IXYS MOSFETs 85 Amps 600V 36 Rds Lead-Time 13 Weeks

Si Through Hole TO-264-3 N-Channel 1 Channel 600 V 85 A 30 mOhms - 20 V, 20 V 4 V 500 nC - 55 C + 150 C Enhancement CoolMOS Tube