CoolSiC MOSFETs

Results: 43
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename Packaging
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 497In Stock
Min.: 1
Mult.: 1
: 2.000

Si CoolSiC Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 10.172In Stock
Min.: 1
Mult.: 1
: 2.000

Si CoolSiC Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 1.934In Stock
Min.: 1
Mult.: 1
: 2.000

Si CoolSiC Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 1.644In Stock
Min.: 1
Mult.: 1
: 2.000

Si CoolSiC Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 239In Stock
Min.: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 750 V 163 A 10.6 mOhms - 5 V, 23 V 5.6 V 178 nC - 55 C + 175 C 517 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 261In Stock
Min.: 1
Mult.: 1
: 2.000

Si CoolSiC Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 249In Stock
Min.: 1
Mult.: 1
: 2.000

Si CoolSiC Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 310In Stock
Min.: 1
Mult.: 1
: 2.000

Si CoolSiC Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs SIC_DISCRETE
Min.: 1
Mult.: 1
: 1.000

Si SMD/SMT CoolSiC Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
Min.: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 400 V 112 A 14.4 mOhms - 7 V, 23 V 4.5 V 85 nC - 55 C + 175 C 341 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
Min.: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 400 V 99 A 19.1 mOhms - 7 V, 23 V 4.5 V 62 nC - 55 C + 175 C 273 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
Min.: 1
Mult.: 1

SiC Through Hole TO-247-3 N-Channel 1 Channel 400 V 46 A 45.7 mOhms - 7 V, 23 V 4.5 V 26 nC - 55 C + 175 C 139 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
Min.: 1
Mult.: 1

SiC Through Hole TO-247-3 N-Channel 1 Channel 400 V 40 A 56.2 mOhms - 7 V, 23 V 4.5 V 21 nC - 55 C + 175 C 130 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
Min.: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 400 V 65 A 32.1 Ohms - 7 V, 23 V 4.5 V 36 nC - 55 C + 175 C 195 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
Min.: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 400 V 46 A 45.7 mOhms - 7 V, 23 V 4.5 V 26 nC - 55 C + 175 C 139 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SIC_DISCRETE Non-Stocked Lead-Time 26 Weeks
Min.: 1.000
Mult.: 1.000
: 1.000

Si CoolSiC Reel
Infineon Technologies MOSFETs AUTOMOTIVE_SICMOS Lead-Time 52 Weeks
Min.: 1
Mult.: 1
: 1.000

Si CoolSiC Reel, Cut Tape
Infineon Technologies MOSFETs SIC_DISCRETE Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Si CoolSiC Tube