HyperFET MOSFETs

Results: 116
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging

IXYS MOSFETs 500V 24A
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 24 A 230 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs DIODE Id26 BVdass500
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 26 A 200 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 30 Amps 400V 0.16 Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 400 V 30 A 160 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 30 Amps 600V 0.23 Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30 A 230 mOhms - 20 V, 20 V - 55 C + 150 C 500 W Enhancement HyperFET Tube

IXYS MOSFETs 36 Amps 550V 0.16 Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 550 V 36 A 160 mOhms - 30 V, 30 V - 55 C + 150 C 500 W Enhancement HyperFET Tube

IXYS MOSFETs 36 Amps 550V 0.16 Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 550 V 36 A 180 mOhms - 30 V, 30 V - 55 C + 150 C 560 W Enhancement HyperFET Tube

IXYS MOSFETs 300V 40A
Datasheet
Non-Stocked Lead-Time 29 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 40 A 85 mOhms - 20 V, 20 V 4 V 177 nC - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 42 Amps 200V
Datasheet
Non-Stocked Lead-Time 29 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 42 A 60 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs DIODE Id50 BVdass200
Datasheet
Non-Stocked Lead-Time 29 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 50 A 45 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 200V 58A
Datasheet
Non-Stocked
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 58 A 40 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 60 Amps 200V 0.033 Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 60 A 33 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 67 Amps 100V
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 67 A 25 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 70V 76A
Datasheet
Non-Stocked Lead-Time 39 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 70 V 76 A 11 mOhms - 20 V, 20 V - 55 C + 175 C 360 W Enhancement HyperFET Tube

IXYS MOSFETs 70V 76A
Datasheet
Non-Stocked
Min.: 90
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 70 V 76 A 12 mOhms - 20 V, 20 V - 55 C + 175 C 360 W Enhancement HyperFET Tube

IXYS MOSFETs 7 Amps 800V
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 7 A 1.4 Ohms - 20 V, 20 V - 55 C + 150 C 180 W Enhancement HyperFET Tube

IXYS MOSFETs 7 Amps 900V 1.5W Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 7 A 1.5 Ohms - 20 V, 20 V - 55 C + 150 C 180 W Enhancement HyperFET Tube

IXYS MOSFETs 80 Amps 100V 0.125 Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 80 A 12.5 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 88 Amps 200V 0.03 Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 88 A 30 mOhms - 30 V, 30 V - 55 C + 150 C 500 W Enhancement HyperFET Tube

IXYS MOSFETs 8 Amps 800V 1.1 Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 8 A 1.1 Ohms - 20 V, 20 V - 55 C + 150 C 180 W Enhancement HyperFET Tube
IXYS MOSFETs 13 Amps 500V 0.4 Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-268-3 N-Channel 1 Channel 500 V 13 A 400 mOhms - 20 V, 20 V - 55 C + 150 C 180 W Enhancement HyperFET Tube
IXYS MOSFETs 70V 110A
Datasheet
Non-Stocked Lead-Time 37 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 70 V 110 A 6 mOhms - 20 V, 20 V - 55 C + 150 C 500 W Enhancement HyperFET Tube
IXYS MOSFETs 120 Amps 250V 0.022 Rds
Datasheet
Non-Stocked
Min.: 25
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 250 V 120 A 22 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HyperFET Tube
IXYS MOSFETs 150 Amps 100V
Datasheet
Non-Stocked
Min.: 25
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 100 V 150 A 12 mOhms HyperFET Tube
IXYS MOSFETs 150 Amps 150V 0.0125 Rds
Datasheet
Non-Stocked
Min.: 25
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 150 V 150 A 12.5 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HyperFET Tube
IXYS MOSFETs 16 Amps 900V 0.65 Rds
Datasheet
Non-Stocked
Min.: 25
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 900 V 16 A 650 mOhms - 20 V, 20 V - 55 C + 150 C 360 W Enhancement HyperFET Tube