PolarHT MOSFETs

Results: 38
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
IXYS MOSFETs IXTA62N15P TRL
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 800
Mult.: 800
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 150 V 62 A 40 mOhms - 20 V, 20 V 3 V 70 nC - 55 C + 175 C 350 W Enhancement PolarHT Reel
IXYS MOSFETs IXTA75N10P TRL
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 800
Mult.: 800
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 100 V 75 A 25 mOhms - 20 V, 20 V 3 V 74 nC - 55 C + 175 C 360 W Enhancement PolarHT Reel
IXYS MOSFETs 120 Amps 200V 0.022 Rds
Datasheet
Non-Stocked Lead-Time 39 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 200 V 120 A 22 mOhms - 20 V, 20 V 5 V 152 nC - 55 C + 175 C 714 W Enhancement PolarHT Tube
IXYS MOSFETs 42 Amps 250V 0.084 Rds
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 250 V 42 A 84 mOhms - 20 V, 20 V 5.5 V 70 nC - 55 C + 150 C 300 W Enhancement PolarHT Tube
IXYS MOSFETs 100 Amps 250V 0.027 Rds
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-3P-3 N-Channel 1 Channel 250 V 100 A 27 mOhms - 20 V, 20 V 5 V 185 nC - 55 C + 150 C 600 W Enhancement PolarHT Tube
IXYS MOSFETs 120 Amps 200V 0.022 Rds
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-3P-3 N-Channel 1 Channel 200 V 120 A 22 mOhms - 20 V, 20 V 5 V 152 nC - 55 C + 175 C 714 W Enhancement PolarHT Tube
IXYS MOSFETs 140 Amps 100V 0.011 Rds
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-3P-3 N-Channel 1 Channel 100 V 140 A 11 mOhms - 20 V, 20 V 5 V 155 nC - 55 C + 175 C 600 W Enhancement PolarHT Tube
IXYS MOSFETs 150 Amps 150V 0.013 Rds
Datasheet
Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-3P-3 N-Channel 1 Channel 150 V 150 A 13 mOhms - 20 V, 20 V 5 V 190 nC - 55 C + 175 C 714 W Enhancement PolarHT Tube
IXYS MOSFETs 96 Amps 150V 0.024 Rds
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-3P-3 N-Channel 1 Channel 150 V 96 A 24 mOhms - 20 V, 20 V 5 V 110 nC - 55 C + 175 C 480 W Enhancement PolarHT Tube
IXYS MOSFETs 64 Amps 250V 0.049 Rds
Datasheet
Non-Stocked Lead-Time 37 Weeks
Min.: 300
Mult.: 30
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 250 V 64 A 49 mOhms - 20 V, 20 V 5 V 105 nC - 55 C + 150 C 400 W Enhancement PolarHT Tube
IXYS MOSFETs 69 Amps 300V 0.049 Rds
Datasheet
Non-Stocked Lead-Time 37 Weeks
Min.: 1
Mult.: 1
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 300 V 69 A 49 mOhms - 20 V, 20 V 5 V 156 nC - 55 C + 150 C 500 W Enhancement PolarHT Tube
IXYS MOSFETs 74 Amps 200V 0.034 Rds
Datasheet
Non-Stocked Lead-Time 39 Weeks
Min.: 300
Mult.: 30
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 200 V 74 A 34 mOhms - 20 V, 20 V 5 V 107 nC - 55 C + 175 C 480 W Enhancement PolarHT Tube
IXYS MOSFETs 96 Amps 200V 0.024 Rds
Datasheet
Non-Stocked Lead-Time 37 Weeks
Min.: 1
Mult.: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 200 V 96 A 24 mOhms - 20 V, 20 V 5 V 145 nC - 55 C + 175 C 600 W Enhancement PolarHT Tube