HiPerFET Series MOSFETs

Results: 105
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging

IXYS MOSFETs 6 Amps 1000V 2 Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 6 A 1.9 Ohms - 20 V, 20 V - 55 C + 150 C 180 W Enhancement HiPerFET Tube

IXYS MOSFETs 70V 76A
Datasheet
Non-Stocked Lead-Time 39 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 70 V 76 A 11 mOhms - 20 V, 20 V - 55 C + 175 C 360 W Enhancement HyperFET Tube

IXYS MOSFETs 70V 76A
Datasheet
Non-Stocked
Min.: 90
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 70 V 76 A 12 mOhms - 20 V, 20 V - 55 C + 175 C 360 W Enhancement HyperFET Tube

IXYS MOSFETs 7 Amps 800V
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 7 A 1.4 Ohms - 20 V, 20 V - 55 C + 150 C 180 W Enhancement HyperFET Tube
IXYS MOSFETs 70V 110A
Datasheet
Non-Stocked Lead-Time 37 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 70 V 110 A 6 mOhms - 20 V, 20 V - 55 C + 150 C 500 W Enhancement HyperFET Tube
IXYS MOSFETs 170 Amps 100V
Datasheet
Non-Stocked
Min.: 25
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 100 V 170 A 10 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HyperFET Tube
IXYS MOSFETs 1KV 24A
Datasheet
Non-Stocked Lead-Time 37 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 1 kV 24 A 390 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HyperFET Tube
IXYS MOSFETs 26 Amps 900V 0.3 Rds
Datasheet
Non-Stocked
Min.: 300
Mult.: 300

Si Through Hole TO-264-3 N-Channel 1 Channel 900 V 26 A 300 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HyperFET Tube
IXYS MOSFETs 800V 27A
Datasheet
Non-Stocked
Min.: 25
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 800 V 27 A 300 mOhms - 20 V, 20 V - 55 C + 150 C 500 W Enhancement HyperFET Tube
IXYS MOSFETs 800V 34A
Datasheet
Non-Stocked
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 800 V 34 A 240 mOhms - 20 V, 20 V 5 V 270 nC - 55 C + 150 C 560 W Enhancement HyperFET Tube
IXYS MOSFETs 600V 36A
Datasheet
Non-Stocked
Min.: 50
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 600 V 36 A 180 mOhms - 20 V, 20 V - 55 C + 150 C 500 W Enhancement HyperFET Tube
IXYS MOSFETs 44 Amps 500V 0.12 Rds
Datasheet
Non-Stocked Lead-Time 44 Weeks
Min.: 25
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 44 A 120 mOhms - 20 V, 20 V - 55 C + 150 C 500 W Enhancement HiPerFET Tube
IXYS MOSFETs 48 Amps 500V 0.1 Rds
Datasheet
Non-Stocked Lead-Time 44 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 48 A 100 mOhms - 20 V, 20 V - 55 C + 150 C 500 W Enhancement HiPerFET Tube
IXYS MOSFETs 500V 55A
Datasheet
Non-Stocked Lead-Time 42 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 55 A 90 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HyperFET Tube
IXYS MOSFETs 200V 90A
Datasheet
Non-Stocked Lead-Time 36 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 200 V 90 A 22 mOhms - 20 V, 20 V - 55 C + 150 C 500 W Enhancement HiPerFET Tube
IXYS MOSFETs 90 Amps 300V 0.033 Rds
Datasheet
Non-Stocked Lead-Time 39 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 90 A 33 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HyperFET Tube
IXYS MOSFETs 34 Amps 1000V 0.28W Rds
Datasheet
Non-Stocked
Min.: 25
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 1 kV 30 A 300 mOhms - 20 V, 20 V - 55 C + 150 C 550 W Enhancement HyperFET Tube

IXYS MOSFETs 200V 105A
Datasheet
Non-Stocked Lead-Time 37 Weeks
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 105 A 17 mOhms - 20 V, 20 V - 55 C + 150 C 400 W Enhancement HyperFET Tube

IXYS MOSFETs 180 Amps 60V 0.005 Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 60 V 180 A 5 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HyperFET Tube

IXYS MOSFETs 180 Amps 85V 0.007 Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 85 V 180 A 7 mOhms - 20 V, 20 V - 55 C + 150 C 400 W Enhancement HyperFET Tube
IXYS MOSFETs 12 Amps 1000V 1.05 Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30
Si SMD/SMT TO-268-3 N-Channel 1 Channel 1 kV 12 A 1.05 Ohms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube
IXYS MOSFETs 24 Amps 500V
Datasheet
Non-Stocked
Min.: 30
Mult.: 30
Si SMD/SMT TO-268-3 N-Channel 1 Channel 500 V 24 A 230 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube
IXYS MOSFETs 24 Amps 500V 0.23 Rds
Datasheet
Non-Stocked Lead-Time 39 Weeks
Min.: 30
Mult.: 30
Si SMD/SMT TO-268-3 N-Channel 1 Channel 500 V 24 A 230 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HiPerFET Tube
IXYS MOSFETs 58 Amps 200V 0.08W Rds
Datasheet
Non-Stocked
Min.: 300
Mult.: 30
Si SMD/SMT TO-268-3 N-Channel 1 Channel 200 V 58 A 40 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement HyperFET Tube

IXYS MOSFETs 100 Amps 250V 0.027 Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 100 A 27 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HyperFET Tube