Infineon Technologies IRF540N/Z Advanced HEXFET® Power MOSFETs
Infineon IRF540N/Z Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed, ruggedized device design, and 175°C junction operating temperature that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Features
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- 175°C operating temperature
- Fast switching
- Fully avalanche rated
- Lead-free
Applications
- AC-DC
- Appliances
- Audio
- Industrial
- Lighting
Published: 2014-08-07
| Updated: 2022-03-11